to-25 2 -2l plastic-encapsulate transistors 2SA1700 transistor (pnp) features z high b reakdown v oltage z adoption of mbit p rocess z excellent h fe l inearity maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -400 v v ceo collector-emitter voltage -400 v v ebo emitter-base voltage -5 v i c collector current ?continuous -0.2 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-10a,i e =0 -400 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -400 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cut-off current i cbo v cb =-300v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-10v,i c =-50ma 60 200 collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.8 v base- emitter saturation voltage v be(sat) i c =-50ma,i b =-5ma -1 v transition frequency f t v ce =-30v,i c =-10ma 70 mhz output capacitance c ob v cb =-30v,f=1mhz 5 pf reverse transfer capacitance c re v cb =-30v,f=1mhz 4 pf turn-on time t on 0.25 s turn-off time t off v cc =-150v,i b1 =i b2 =-5ma,r l =3k ? 5 s classification of h fe rank d e range 60-120 100-200 to-2 5 2 -2l 1.base 2.collector 3.emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
|
